发明名称 METHOD OF PRODUCING POROUS SILICA FILM, POROUS SILICA FILM OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE MADE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of producing a porous silica film which has a low dielectric constant and excellent hydrophobicity without requiring hydrophobization treatment after its production, and to provide the porous silica film obtained by the method. SOLUTION: In the method of producing a porous silica film, alkoxy silanes are subjected to hydrolysis and condensation in the presence of a surfactant and a cyclic siloxane to prepare a coating liquid, the surface of a substrate is coated with the coating liquid, and next, the coated film formed on the surface of the substrate is heated. By the method of producing the porous silica film, the porous silica film having a reduced dielectric constant owing to the increase of its porosity, and having excellent hydrophobicity can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004210579(A) 申请公布日期 2004.07.29
申请号 JP20020380845 申请日期 2002.12.27
申请人 MITSUI CHEMICALS INC 发明人 TAKAMURA KAZUO;OIKE SHUNSUKE;MURAKAMI MASAMI;KUBOTA TAKESHI
分类号 C08J9/28;C01B33/12;H01L21/316;(IPC1-7):C01B33/12 主分类号 C08J9/28
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