| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a device for measuring Lov resistance, an evaluation method using the device for measuring the Lov resistance, a device substrate having the device for measuring the Lov resistance, and a panel. SOLUTION: A TEG (Test Element Group), having an evaluation device (an evaluation device for measuring an impurity concentration in a gate overlapping region represented as a Lov resistance monitor), is formed. The alignment (mask alignment) of a mask used for manufacturing a gate electrode of the Lov resistance monitor is ventured to be displaced at manufacture, and a sheet resistance distribution is obtained along the source/drain region (high concentrated impurity region), the gate-overlapping region, and a channel forming region, so that an impurity concentration of each region is precisely grasped. Evaluation devices (A) to (D) are manufactured as Lov resistance monitors, each having a mask alignment displaced by a sub-μm spacing, and a resistance is measured for each of the devices. In this case, the gate electrode of the evaluation device has a laminated structure of a lower conductive film (first conductive film) 101 and an upper conductive film (second conductive film) 102, and the end of the lower conductive film extends over the end of the upper conductive film. COPYRIGHT: (C)2004,JPO&NCIPI
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