| 摘要 |
PROBLEM TO BE SOLVED: To protect the sidewalls of a ferroelectric capacitor from ions when etching its hard mask, with respect to the manufacturing method of a semiconductor device having the capacitor. SOLUTION: The manufacturing method of the semiconductor device includes the process comprising a step for forming a first conductive film on a first insulation film 10, a step for forming a dielectric film on the first conductive film, a step for forming a second conductive film on the dielectric film, and a step for forming a hard mask 22 on the second conductive film. Further, the manufacturing method of the semiconductor device includes the process wherein by etching successively the second conductive film, the dielectric film, and the first conductive film which are present in the region uncovered with the hard mask 22. Through these etching processes, a capacitor Q<SB>1</SB>is formed using the second conductive film as its upper electrode, using the dielectric film as its capacitor dielectric film, and using the first conductive film as its lower electrode. The second conductive film, the dielectric film, and the first conductive film are left under the hard mask 22. Thereafter, at least a portion of the hard mask 22 is removed in the state of covering the sidewalls of the capacitor Q<SB>1</SB>with second insulation films 23. COPYRIGHT: (C)2004,JPO&NCIPI
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