| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of a metal to an interlayer insulating film from a metal gate electrode when or after being formed. SOLUTION: After polysilicon is etched to form a dummy gate (step S1), an exposed surface after etched is, for example, thermally oxidized to form a diffusion preventing film (step S2). Thereafter, a metal layer made of metal is formed so as to come into contact with the dummy gate (step S5), and the metal is replaced with the dummy gate by a heat treatment (step S6) to form the metal gate electrode (step S7). Thus, even if the interlayer insulating film is formed after the diffusion preventing film is formed, the dummy gate is isolated from the interlayer insulating film by the diffusion preventing film. Therefore, a diffusion of a metal to the interlayer insulating film from the metal gate electrode when or after being formed is prevented to materialize a semiconductor device of a high breakdown strength with a low-resistive gate electrode. COPYRIGHT: (C)2004,JPO&NCIPI
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