发明名称 |
FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING SAME, AND FERROELECTRIC THIN-FILM ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a 90°domain requires a high electric field when it is made to contribute as a polarization component because it has a polarization axis at a right angle with an applied electric field in relation to the domain (polarization domain) of a ferroelectric substance, and therefore it is hard to use an ferroelectric thin film on a low voltage. SOLUTION: The ferroelectric thin film has a structure of highly-oriented polycrystal in which 180°domains and 90°domains are rotated at the same angle and reversed in its plane in the same electric field in the direction in which an electric field is applied. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004214274(A) |
申请公布日期 |
2004.07.29 |
申请号 |
JP20020379418 |
申请日期 |
2002.12.27 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI |
分类号 |
H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L21/316 |
代理机构 |
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地址 |
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