发明名称 FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING SAME, AND FERROELECTRIC THIN-FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem wherein a 90°domain requires a high electric field when it is made to contribute as a polarization component because it has a polarization axis at a right angle with an applied electric field in relation to the domain (polarization domain) of a ferroelectric substance, and therefore it is hard to use an ferroelectric thin film on a low voltage. SOLUTION: The ferroelectric thin film has a structure of highly-oriented polycrystal in which 180°domains and 90°domains are rotated at the same angle and reversed in its plane in the same electric field in the direction in which an electric field is applied. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214274(A) 申请公布日期 2004.07.29
申请号 JP20020379418 申请日期 2002.12.27
申请人 SEIKO EPSON CORP 发明人 KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI
分类号 H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L21/316
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