发明名称 Line patterned gate structure for a field emission display
摘要 Electron emitting structures and methods of electron emission are provided. In one implementation, an electron emitting structure comprises a substrate, a cathode electrode, an insulating material and a gate electrode. Linear apertures are formed in the gate electrode and in the insulating material in a portion of the gate electrode crossing over the cathode electrode. And an electron emitting material is deposited on a portion of the cathode electrode within each linear aperture. In another implementation, the cathode electrode includes linear cathode sections formed in a portion of the cathode electrode, and the gate electrode has linear gate sections. A respective linear cathode section is located in between two adjacent linear gate sections. And an electron emitting material is deposited on at least a portion of each linear cathode section. In preferred form, the electron emitting structure is implemented in a field emission display (FED).
申请公布号 US2004145299(A1) 申请公布日期 2004.07.29
申请号 US20030350661 申请日期 2003.01.24
申请人 SONY CORPORATION;SONY CORPORATION 发明人 WANG JAMES QIAN;RUSS BENJAMIN EDWARD;BARGER JACK
分类号 G09G;H01J1/02;H01J1/62;H01J3/02;H01J9/12;H01J29/48;H01J63/04;(IPC1-7):H01J1/62 主分类号 G09G
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