A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to a lead frame body (101) such as a copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
申请公布号
WO2004064154(A1)
申请公布日期
2004.07.29
申请号
WO2004JP00152
申请日期
2004.01.13
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;TOMOHIRO, HIDEKAZU;FUJII, MASAYUKI;SATOU, NORIO;YAMADA, TOMOYUKI;KUSANO, TOMIO