| 发明名称 |
Variable threshold semiconductor device and method of operating same |
| 摘要 |
An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits a variable threshold voltage is disclosed. The resulting device can be incorporated into a number of useful applications, including as part of a memory device, a logic device, etc.
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| 申请公布号 |
US2004145023(A1) |
申请公布日期 |
2004.07.29 |
| 申请号 |
US20040757245 |
申请日期 |
2004.01.14 |
| 申请人 |
KING TSU-JAE;LIU DAVID K.Y. |
发明人 |
KING TSU-JAE;LIU DAVID K.Y. |
| 分类号 |
H01L29/78;G11C5/14;G11C11/39;G11C16/04;H01L21/28;H01L21/8238;H01L27/088;H01L27/092;H01L29/66;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
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