发明名称 |
Tunnel magnetoresistive element |
摘要 |
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film) (1); an ultrathin ferromagnetic layer (2) disposed on the underlayer (1); an insulating layer (3) disposed on the ultrathin ferromagnetic layer (2); and a ferromagnetic electrode (4) disposed on the insulating layer (3).
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申请公布号 |
US2004144995(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030478203 |
申请日期 |
2003.11.26 |
申请人 |
NAGAHAMA TARO;YUASA SHINJI;SUZUKI YOSHISHIGE |
发明人 |
NAGAHAMA TARO;YUASA SHINJI;SUZUKI YOSHISHIGE |
分类号 |
G01R33/06;G01R33/09;G11C11/16;H01F10/32;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L31/109 |
主分类号 |
G01R33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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