Silicon carbide power mos field effect transistors and manufacturing methods,申请号AU20030299587-传众专利搜索

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发明名称	Silicon carbide power mos field effect transistors and manufacturing methods
摘要
申请公布号	AU2003299587(A8)	申请公布日期	2004.07.29
申请号	AU20030299587	申请日期	2003.12.04
申请人	CREE, INC.	发明人	SEI-HYUNG RYU
分类号	H01L21/04;H01L29/08;H01L29/24;H01L29/78;(IPC1-7):H01L29/78;H01L21/336	主分类号	H01L21/04
代理机构		代理人
主权项
地址

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