| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating a substrate which can reduce the influence of the time required for controlling the temperature of substrate, on the reduction of the throughput as much as possible, and to provide a substrate treating apparatus which can accurately perform a temperature control in a unit for treating liquid to a substrate. SOLUTION: Each heat treatment unit of ten steps G3-G5 and each application treatment unit of five steps G1 and G2 are arranged at the periphery of a first main wafer transfer A1 and a second main wafer transfer A2, and in the heat treatment unit G3-G5, by transferring the wafer W while controlling the temperature of the wafer W using an apparatus C for controlling temperature and transferring, the influence of the time required for controlling the temperature of the substrate, on the reduction of the throughput can be reduced as much as possible. COPYRIGHT: (C)2004,JPO&NCIPI
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