| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a vertical type trench structure capable of suppressing the local increase of the electric field strength of the bottom of a trench gate and suppressing the deterioration of withstand pressure between drain sources or collector emitters. SOLUTION: This semiconductor device is provided with a first semiconductor layer 12 of a first conductivity type on one side of a semiconductor substrate 11 of the first conductivity type, and a second semiconductor layer 13 of a second conductivity type the first semiconductor layer 12. A third semiconductor layer 14 of the first conductivity type is provided on the surface of the second semiconductor layer 13. A trench 15 is formed so as to penetrate the third semiconductor layer 14 and the second semiconductor layer 13 and to reach the first semiconductor layer 12. The first and second semiconductor layers 12 and 13 are provided with a part 21a in which the jointing surface 21 of the both is parallel to the semiconductor substrate 11, and a part 21b formed so as to be depressed toward the side 15a of the trench 15 and come in contact with the side 15a. A distance L1 between the side 15a opposite to the adjacent trench 15 is formed three or more as large as the distance L2 of a boundary 21c of the parts 21a and 21b, and the side 15a. COPYRIGHT: (C)2004,JPO&NCIPI
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