| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an FET forming process is complicated, deterioration of yield due to complication is anticipated, and carrier mobility is deteriorated by thinning a strain Si layer, in a method using an SGOI (SiGe on insulator) substrate. SOLUTION: The field effect transistor is provided with a semiconductor region formed on a substrate, a first conductivity type channel region formed in the semiconductor region, a gate insulating film which is formed on the channel region and contains at least a metal oxide layer composed of crystalline substance different in lattice interval from the substrate, a gate electrode formed on the gate insulating film, and a second conductivity type source/drain region formed in the semiconductor region on both sides of the gate electrode. The lattice interval at least in the channel region of the substrate is characterized by being modulated. COPYRIGHT: (C)2004,JPO&NCIPI
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