发明名称 Process for forming and acoustically connecting structures on a substrate
摘要 The present invention describes a process that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plate RIE dry etch processes, advanced deep and inductively coupled plasma RIE processes. Three embodiments for connecting the chamber to the cavity from the top side of the substrate, e.g. by using pilot openings formed using at least a portion of the mesh as an etch mask, by forming the vent openings using at least a portion of the mesh as an etch mask, or by having the chamber intersect the vent openings as the chamber is being formed, illustrate how the disclosed process may be modified. By forming the cavity on the back side of the substrate, the depth of the vent holes is decreased. Additionally, using at least a portion of the micro-machined mesh as an etch mask for the vent holes makes the process self-aligning.
申请公布号 US2004146810(A1) 申请公布日期 2004.07.29
申请号 US20030349618 申请日期 2003.01.23
申请人 GABRIEL KAIGHAM J.;ZHU XU 发明人 GABRIEL KAIGHAM J.;ZHU XU
分类号 B81C1/00;B81B3/00;H04R19/00;(IPC1-7):B44C1/22 主分类号 B81C1/00
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