发明名称 |
Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices |
摘要 |
Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer.
|
申请公布号 |
US2004147094(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030741705 |
申请日期 |
2003.12.19 |
申请人 |
HABERERN KEVIN WARD;ROSADO RAYMOND;BERGMAN MICHAEL JOHN;EMERSON DAVID TODD |
发明人 |
HABERERN KEVIN WARD;ROSADO RAYMOND;BERGMAN MICHAEL JOHN;EMERSON DAVID TODD |
分类号 |
C30B1/00;H01L21/00;H01L33/14;H01S5/042;H01S5/22;H01S5/223;H01S5/227;H01S5/323;(IPC1-7):C30B1/00 |
主分类号 |
C30B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|