Surface planarization

摘要

Embodiments of methods and apparatus in accordance with the present invention provide a chemical mechanical planarization (CMP) process that provides single or multiple polishing pads to have a different rotational velocity, applied pressure and oscillation frequency on the surface of the substrate to address and compensate for the WIW (with-in-substrate) and WID (with-in-die) non-uniformities in planarization ability. The velocity of each polishing pad is adjustable providing a closer match to the substrate surface velocity over a particular zone to yield a linear velocity on the surface of the substrate.