发明名称 LOW THERMAL EXPANSION MATERIAL
摘要 <p>A low thermal expansion material usable for various purposes is disclosed. The low thermal expansion material is substantially composed of a crystal expressed by the composition formula: RM(QO4)3 (wherein R represents at least one of Zr and Hf; M represents at least one of Mg, Ca, Sr, Ba and Ra; and Q represents at least one of W and Mo).</p>
申请公布号 WO2004063120(A1) 申请公布日期 2004.07.29
申请号 WO2004JP00149 申请日期 2004.01.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;OMOTE, ATSUSHI;SUZUKI, TOMOKO;SUZUKI, MASA-AKI 发明人 OMOTE, ATSUSHI;SUZUKI, TOMOKO;SUZUKI, MASA-AKI
分类号 C01G39/00;C01G41/00;C04B35/495;(IPC1-7):C04B35/495;C01G41/02;C01G39/02 主分类号 C01G39/00
代理机构 代理人
主权项
地址