| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for crystallizing silicon and, more particularly, a method for crystallizing silicon capable of dissolving the unevenness of the crystalline state that occurs at a part at which laser shots overlap. <P>SOLUTION: In the present crystallizing method, an amorphous preparatory film is formed on the entire surface of a substrate and after a high melting point metal is evaporated and deposited on a part except for the part at which a thin film transistor element is formed, crystallization is performed by the irradiation of laser. By this process, the unevenness due to the overlap of the laser shots does not occur in the region except for the thin film transistor, resulting in an advantage that a polycrystalline thin film transistor for a display unit of high picture quality can be manufactured. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
