| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, with which the retention capability of a flash-memory device is improved. SOLUTION: The method contains a step of forming a gate electrode on a semiconductor substrate, a step of depositing a spacer oxide film on the semiconductor substrate on which the gate electrode is formed, a step of forming a spacer on the side wall of the gate electrode by anisotropically dry-etching the spacer oxide film, and a step of carrying out rapid thermal annealing on the spacer oxide film in oxygen atmosphere to precipitate the hydrogen contained in the spacer on the surface of the spacer. COPYRIGHT: (C)2004,JPO&NCIPI
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