| 摘要 |
PROBLEM TO BE SOLVED: To provide a VTMIS semiconductor device, which is suitable for voltage reduction by taking a means for maintaining high concentration of impurities in a body region while suppressing the increase of a threshold level voltage of a transistor. SOLUTION: An SiGe-nHVTMISFET includes a gate insulating film 18, a gate electrode 19, a source-drain regions 31a, 31b, an Si body region 25, an SiGe body region 26, an Si channel region 27, and a body contact, and is constructed that a body bias can be applied to the Si body region 25 and the SiGe body region 26. Holes are accumulated to a band offset formed on a valence band. Consequently, the potential of a conduction band lowers, and therefore the increase of the threshold voltage is suppressed and a substrate bias coefficient is increased. COPYRIGHT: (C)2004,JPO&NCIPI
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