| 摘要 |
PROBLEM TO BE SOLVED: To easily achieve increase of the breakdown voltage of an element and the fining of the element. SOLUTION: An annular field plate 19 and a floating limiter ring 20 are formed along the edge of a semiconductor substrate while surrounding an impurity diffusion region composing the element and an electrode. The field plate 19 is connected to the floating limiter ring 20 via a contact hole 14d of an insulating film. A source pad 17a and a p-type diffusion region 25 adjacent to the connection portion of the filed plate 19 and the floating limiter ring 20 have notches 17b, 25a. The connection portion is widely formed while projecting into the notches 17b, 25a to uniformly maintain the space between the field plates 19 and that between the floating limiter rings 20. COPYRIGHT: (C)2004,JPO&NCIPI
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