| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photo detection device which can realize desired spectral sensitivity characteristics. SOLUTION: A first photo diode 15, a second photo diode 17, and a signal processing circuit 30 are integrated on a single substrate. The first photo diode 15 and the second photo diode 17 have a light incident face 152 and a light incident face 172, respectively. On the light incident face 152, an optical filter composed of an infrared light transmission resin film 154a and a red-color light transmission resin film 154b is formed. The infrared light transmission resin film 154a and the red-color light transmission resin film 154b are located adjacent to each other with small spacing, near a division line which passes the central point of the light incident face 152 and are parallel to two sides of the light incident face 152. The signal processing circuit 30 amplifies the output of the first photo diode 15 by k times, and subtracts the output of the first photo diode 15 amplified by k times from the output of the second photo diode 17. COPYRIGHT: (C)2004,JPO&NCIPI
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