发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the quality of a laser beam in a lateral direction. SOLUTION: An electrode stripe 10 is formed by inclining it in a face in a lateral direction against an oscillation optical axis Q of the laser beam. Thus, the quality of the laser beam in the lateral direction can considerably be improved and luminance can be improved much more with a single electrode stripe 5 even in a semiconductor laser device having a gain waveguide structure in the lateral direction. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214226(A) 申请公布日期 2004.07.29
申请号 JP20020378280 申请日期 2002.12.26
申请人 TOSHIBA CORP 发明人 YAMADA AKITAKA;OKANO HIDEAKI
分类号 H01S5/00;H01S5/042;H01S5/10;H01S5/20;H01S5/40;(IPC1-7):H01S5/042 主分类号 H01S5/00
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