发明名称 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
摘要 A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.
申请公布号 US2004147206(A1) 申请公布日期 2004.07.29
申请号 US20040759163 申请日期 2004.01.20
申请人 HITACHI CHEMICAL COMPANY LTD. 发明人 AKAHORI TOSHIHIKO;ASHIZAWA TORANOSUKE;HIRAI KEIZO;KURIHARA MIHO;YOSHIDA MASATO;KURATA YASUSHI
分类号 B24B37/00;B24B37/04;B24D3/34;B44C1/22;C09G1/02;C09K3/14;C09K13/00;H01L21/302;H01L21/3105;(IPC1-7):B24B1/00 主分类号 B24B37/00
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