发明名称 Stencil mask and its manufacturing method
摘要 A stencil mask has a silicon thin film in which an opening pattern is formed, a silicon oxide film, and a support part. The silicon thin film has a two-layer structure of a first silicon thin film and a second silicon thin film stacked one on top of the other. The first and second silicon thin films enable microscopic openings to be made in them. Stacking the first and second silicon thin films one on top of the other makes it possible to achieve the necessary strength and increase the strength of the stencil mask.
申请公布号 US2004147125(A1) 申请公布日期 2004.07.29
申请号 US20030743007 申请日期 2003.12.23
申请人 发明人
分类号 G03F1/16;G03F1/20;H01L21/027;H01L21/266;H01L21/302;H01L21/461;(IPC1-7):H01L21/302 主分类号 G03F1/16
代理机构 代理人
主权项
地址