METHOD FOR THE PRODUCTION OF MONOCRYSTALLINE STRUCTURES AND COMPONENT

摘要

According to prior art, structural errors in substrates in epitactic crystal growth are often carried over from the substrate on which the new material is to be deposited. This leads to a reduction in mechanical properties. According to the inventive method, an intermediate layer (10) is deposited prior to the deposition of epitactic material. Said intermediate layer prevents structural errors in the substrate (7) from being carried over to the newly filled area (13,16).