| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a capacitor with high capacitance, which prevents decrease of the dielectric constant by preventing formation of a silicon-oxide film at the interface between the storage electrode and the dielectric film. <P>SOLUTION: The method of forming the capacitor includes (a) a step of forming an oxide film for forming the storage electrode on an interlayer insulating film having a storage-electrode contact plug, (b) a step of forming a storage-electrode region by exposing the upper face of the storage-electrode contact plug by etching a prescribed region of the oxide film for forming the storage electrode, (c) a step of forming a storage electrode so as to contact the storage-electrode contact plug on the storage-electrode region, (d) a step of removing the oxide film for forming the storage electrode, (e) a step of forming a dielectric film of a stacked structure composed of an Al-rich HfO<SB>2</SB>-Al<SB>2</SB>O<SB>3</SB>mixed film on the surface of the storage electrodes and a Hf-rich HfO<SB>2</SB>-Al<SB>2</SB>O<SB>3</SB>mixed film formed thereon, (f) a step of heat-treating the dielectric film, and (g) a step of forming a plate electrode on the dielectric film. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
