METHOD FOR FORMING MIMCAP (METAL, INSULATOR, METAL CAPACITOR) AND RESISTOR TO SAME LEVEL

摘要

PROBLEM TO BE SOLVED: To provide a process which reduces the number of treatment processes, eliminates a problem about an integration of the process such as a via landing on a resistor and a capacitor, and improves a performance and a property to be used. SOLUTION: An insulating oxide layer is accumulated, a lower electrode of the capacitor is formed by accumulating a metal layer, and a dielectric of the capacitor is formed by accumulating a dielectric layer on the metal layer. the dielectric and the lower electrode of the capacitor are patterned by a lithography and etched. The upper electrode of the capacitor is formed on the capacitor dielectric by accumulating the metal layer, a thin-film resistor with different structure is formed at one side of the capacitor, and a nitride etching-stopping cap is accumulated on the upper electrode of the capacitor and on the metal layer of the thin-film resistor. The upper electrode of the capacitor and the thin-film resistor are patterned by lithography and etched. An interlayer dielectric layer ILD is accumulated on the upper electrode of the capacitor and on the thin-film resistor. An ILD wiring level is patterned by the lithography and etched. An integrated copper structure is formed by accumulating a liner layer and a copper layer. A final structure of MIMCAP is formed by chemical-mechanical polishing of the integrated copper structure. COPYRIGHT: (C)2004,JPO&NCIPI