| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam drawing technology that can precisely calibrate deflection in a micro field used in an electron beam system. SOLUTION: The electron beam lithography system is provided with an electron optical system where an electron beam emitted from an electron source is given onto a test piece for scanning through a deflection means having at least two different deflection speeds and an optional pattern is formed, a calibration mark (302) provided on a stage, and an electron detector that detects an reflection electron, a secondary electron, and a transmission electron obtained through irradiation of the electron beam. In addition, it includes a function for repeatedly forming a pattern-like beam (201) by moving the electron beam through high-speed scanning (301), a function for moving the electron beam on the calibration mark through low-speed scanning (303) in synchronous with a repeating one cycle, and a function for detecting the reflection electron, secondary electron and transmission electron emitted from the calibration mark and its vicinity through low-speed scanning and calibrating the position or the deviated quantity of the electron beam, or its blanking time on the basis of the obtained result. COPYRIGHT: (C)2004,JPO&NCIPI
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