| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming in-layer and interlayer air bridge structures, in a large scale integrated circuit (VLSI) device, a very large scale integrated circuit (ULSI) device, and a high-performance package. SOLUTION: The method of forming low k (dielectric constant) and ultra-low k multilayer mutual connections on a substrate is provided with a process to form a pair of mutual connection, separated along a side face by an air gap and a support layer in a via level of a dual damascene structure which exists only under a metal wiring, a process to remove a sacrificial dielectric through a holed bridge layer to connect an upper surface of the mutual connection along the side face, a process of executing a multilayer level extraction of the sacrificial layer, a process of sealing the bridge by a controlled method, and a process of reducing the effective dielectric constant of a film holed by using a patterning technology of a quasi-optical lithography. COPYRIGHT: (C)2004,JPO&NCIPI |
