| 摘要 |
PROBLEM TO BE SOLVED: To enhance the recovery rate for metal impurities on a substrate surface to allow accurate quantitative analysis, and to recover the metal impurities from the substrate surface deposited with organic substances, particles or the like, by a simple method. SOLUTION: This metal impurity analyzing method for the silicon substrate surface includes a process for storing a silicon substrate 13 laid on a support table 12, and a mixture solution 14 of nitric acid and sulfuric acid while making the substrate not contact therewith respectively in a sealed reactor 10, and for generating a nitric acid 17 vapor from the mixture solution without heating and pressurizing the reactor to bring the substrate surface into contact with the nitric acid vapor, a process for dropping liquid drops 21 of a dilute acid on the substrate surface, for spreading the drops over the whole surface to dissolve the metal impurities remained on the whole surface into the drop, and for recovering the drops dissolving the metal impurities, and a process for analyzing quantitatively the metal impurities contained in the recovered drops. COPYRIGHT: (C)2004,JPO&NCIPI
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