发明名称 |
Ferroelectric memory structure and fabrication method thereof |
摘要 |
A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.
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申请公布号 |
US2004145003(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20040758628 |
申请日期 |
2004.01.15 |
申请人 |
NATIONAL CHIO-TUNG UNIVERSITY |
发明人 |
TSENG TSEUNG-YUEN;LEE S.Y. |
分类号 |
H01L21/316;H01L21/02;H01L21/28;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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