发明名称 |
Phase-change memory element and method of storing data therein |
摘要 |
A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.
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申请公布号 |
US2004145944(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20040755169 |
申请日期 |
2004.01.09 |
申请人 |
PASHMAKOV BOIL |
发明人 |
PASHMAKOV BOIL |
分类号 |
G11C11/34;G11C16/02;G11C16/10;(IPC1-7):G11C11/50 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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