| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate which can fully play its element function, has a thick insulator layer realizing enough strength, hardly generates warp of a substrate, crystal defect and dislocation and can realize a circuit of high integration degree, and its manufacturing method. SOLUTION: The semiconductor substrate is used for a semiconductor device wherein a passive element 5 is disposed on an insulator and active elements Q1, Q2 are built. A thermal oxide layer 2 which is at least 10μm thick is formed in a portion (A1) wherein the passive element 5 is disposed, and a groove 3 which is filled with polycrystalline silicon 4 is formed in the inside from an outer circumferential surface 2a of the thermal oxide layer 2 along the outer circumferential surface 2a. COPYRIGHT: (C)2004,JPO&NCIPI
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