发明名称 |
Semiconductor apparatus and method for manufacturing the same |
摘要 |
The present invention is to carry out stable doping and to prevent the drastic pressure change in a treatment chamber by reducing degasification of resist during adding impurities. In the present invention, the stability of the impurity ion injection can be ensured by reducing degasification of resist by reducing the area (resist area proportion, that is, the ratio of the area of resist to the whole area of a substrate) of resist pattern which is used depending on the conditions such as acceleration voltage or current density of a doping process. |
申请公布号 |
US2004147067(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030690840 |
申请日期 |
2003.10.23 |
申请人 |
USHITANI HITOMI;NAGAO SHOU;IWABUCHI TOMOYUKI |
发明人 |
USHITANI HITOMI;NAGAO SHOU;IWABUCHI TOMOYUKI |
分类号 |
H01L21/027;H01L21/00;H01L21/266;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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