| 发明名称 |
METHOD AND APPARATUS FOR FORMING SILICON CONTAINING FILMS |
| 摘要 |
The present invention describes a method and apparatus for forming a uniform silicon containing film in a single wafer reactor. According to the present invention, a silicon containing film is deposited in a resistively heated single wafer chamber utilizing a process gas having a silicon source gas and which provides an activation energy less than 0.5 eV at a temperature between 750 °C - 550 °C.
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| 申请公布号 |
WO03060184(A9) |
申请公布日期 |
2004.07.29 |
| 申请号 |
WO2002US40990 |
申请日期 |
2002.12.20 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LUO, LEE;IYER, RAMASESHAN, SURYANARAYANAN;WANG, SHULIN;CHEN, AIHAU;MEISSNER, PAUL |
| 分类号 |
C23C16/24;C23C16/30;C23C16/34;C23C16/40;(IPC1-7):C23C16/24 |
主分类号 |
C23C16/24 |
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