发明名称 |
Multi-layer integrated semiconductor structure |
摘要 |
A multi-layer integrated semiconductor structure including a first device layer having a first plurality of semiconductor elements. A first insulating layer is disposed over the first device layer and includes at least a first via-hole. A first conductive plug is disposed in the first via-hole. An interface portion is disposed over at least the first conductive plug. The multi-layer integrated semiconductor structure further includes a second device layer. The second device layer includes a second plurality of semiconductor elements disposed on a top surface of a substrate, which includes a second via-hole. A second conductive plug is disposed in the second via-hole. The second device layer is aligned and coupled to the first device layer via the interface portion so that the interface portion provides a communication relationship between the first device layer and the second device layer. |
申请公布号 |
AU2003299991(A8) |
申请公布日期 |
2004.07.29 |
申请号 |
AU20030299991 |
申请日期 |
2003.12.30 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
RAFAEL REIF;ANDY FAN;SHAMIK DAS |
分类号 |
H01L21/60;H01L23/48;H01L23/522;H01L25/065 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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