LOW TEMPERATURE SINTERING CERAMIC COMPOSITION FOR USE IN HIGH FREQUENCY, METHOD OF FABRICATING THE SAME AND ELECTRONIC COMPONENT

摘要

A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO₂ in sum total in the range of from 64.0 to 99.2% by mass; Bi₂O₃ in the range of from 0.4 to 33.0% by mass; Li₂O in the range of from 0.4 to 3.0% by mass; and MgO and SiO₂ are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.