发明名称 SOLID STATE IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To attain a wide dynamic range and a high low-illumination sensitivity of a solid state imaging apparatus having a photodiode and a first transistor provided in series between a ground and a drain for every pixel, to output a signal corresponding to a current or charge generated by the photodiode according to a light input from a detection node between the photodiode and the first transistor. SOLUTION: The imaging apparatus controls to alternately repeat a logarithmic operating period for obtaining a logarithmic-converted photoelectric conversion signal with the gate potentialϕ<SB>R</SB>of a first transistor set to a first level and a linear operating period for obtaining a linear photoelectric conversion signal with the gate potentialϕ<SB>R</SB>of the first transistor set to a second level. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214772(A) 申请公布日期 2004.07.29
申请号 JP20020379240 申请日期 2002.12.27
申请人 SHARP CORP 发明人 WATANABE YASUSHI
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/365;H04N5/369;H04N5/374;(IPC1-7):H04N5/335 主分类号 H01L27/146
代理机构 代理人
主权项
地址