| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a CMOS device and a method for manufacturing the CMOS device. SOLUTION: The manufacturing method comprises a process of sticking an SOI wafer 20 having prescribed thickness to the surface of a buried oxide (BOX) substrate 10, a process of forming a gate dielectric 25 on the surface of the SOI wafer 20, a process of forming a shallow trench isolation (STI) area 35 so as to form an almost round corner on the BOX substrate 10, a process of forming gate structure on the surface of the gate dielectric 25, a process of sticking a driving layer to the surface of the SOI wafer 20, a process for executing either one of N-type dopant implanting and P-type dopant implanting in the SOI wafer 20 and the implanting layer, and a process of forming a source/drain region 79(a) from the implanting layer and the SOI wafer 20. The source/drain region 79(a) has thickness larger than the prescribed thickness of the SOI wafer 20, and the gate dielectric is arranged lower than the STI region 35. COPYRIGHT: (C)2004,JPO&NCIPI
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