发明名称 |
MEASURING METHOD OF SILICIDE ABUNDANCE RATIO AND HEAT PROCESSING TEMPERATURE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND X-RAY RECEIVING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a measuring method capable of easily and precisely measuring the abundance ratio of multiple kinds of silicides having a different combining ratio. SOLUTION: A substrate 100 for measuring is prepared by forming a silicon oxide film 102, a polysilicon layer 103, and a titanium silicide layer 104 on a silicon substrate 101 in this sequence. The substrate 100 for measuring is irradiated with X-ray, and the abundance ratio of three kinds of silicides having different combining ratio of the titanium silicide layer 104 is measured from the strength of a hart X-ray emitted from oxygen of the silicon oxide film 102, and the strength of the hard X-ray emitted from the titanium of the titanium silicide layer 104. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004214554(A) |
申请公布日期 |
2004.07.29 |
申请号 |
JP20030002383 |
申请日期 |
2003.01.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KOTANI AKIHIKO;OKUNO YASUTOSHI |
分类号 |
G01N23/223;G01N23/22;H01L21/28;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
G01N23/223 |
代理机构 |
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主权项 |
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地址 |
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