发明名称 FILM FORMING METHOD AND DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a film forming method and device in which a method for applying a bias voltage is simple. SOLUTION: The inside of a chamber is kept in a depressurization condition, and a substrate is held to a substrate holder in the chamber. A film material is evaporated from an evaporation material into the chamber, and the evaporated film material is ionized. The bias voltage for shifting the ionized film material toward the substrate is applied to the substrate holder as a negative electrode by a bias power source device, and at that time, after a pulse-like bias voltage having a first voltage value V1 is applied in a first specific period of time of T4, the pulse-like bias voltage having a second voltage value V2 is applied in a second specific period of time of T5. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214487(A) 申请公布日期 2004.07.29
申请号 JP20030001062 申请日期 2003.01.07
申请人 SHIN MEIWA IND CO LTD;TSUKUBA SEMI TECHNOLOGY:KK;NISSEI ELECTRONICS LTD 发明人 MARUNAKA MASAO;DOI TOSHIYA;TAKEUCHI KIYOSHI;KONDO TAKAHIKO;TAKIGAWA SHIRO;NOSE KOICHI;OTAKE SEIJI
分类号 C23C14/14;C23C14/32;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):H01L21/285;H01L21/320 主分类号 C23C14/14
代理机构 代理人
主权项
地址