发明名称 COMPOSITE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a composite type semiconductor element where voltage to be turned on is easily set to a desired value. SOLUTION: The composite type semiconductor element is provided with a thyristor consisting of an n1 area 11, a p1 area 12, an n2 area 13 and a p2 area 14, a first diode consisting of a first p-type semiconductor area 15 and a first n-type semiconductor area 16 and connected to the p1 area, and a second diode consisting of a second p-type semiconductor area 17 and a second n-type semiconductor area 18 and connected to the n1 area. The first and second diodes are connected in series so that the flowing direction of currents flowing through each by breakdown. By properly increasing the number of diodes to be connected, it is possible to make the thyristor turn on a desired high voltage. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214397(A) 申请公布日期 2004.07.29
申请号 JP20020381887 申请日期 2002.12.27
申请人 SANKEN ELECTRIC CO LTD 发明人 KOSUGI KIMIAKI;TAKAHASHI TETSUYA
分类号 H01L29/74;H01L21/332;H01L29/866;(IPC1-7):H01L29/74 主分类号 H01L29/74
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