| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix type electroluminescent element in high-resolution/high-aperture-rate structure whose production yield is improved. SOLUTION: On an inner surface of a 1st substrate 10, an array element layer 140 including a plurality of driving thin-film transistors T<SB>D</SB>formed in subpixel Psub units is formed and on the array element layer 140, an electric connection pattern 142 which is connected to the driving thin-film transistors T<SB>D</SB>is formed. Each driving thin-film transistor T<SB>D</SB>comprises a gate electrode 112, a semiconductor layer 114, a a source electrode 116, and a drain electrode 118, a first electrode 152 is formed over the entire inner surface of a second substrate 150, and an organic electroluminescent layer 160 including respective light emission layers 156a, 156b, and 156c of red, green, and blue repeatedly arrayed in subpixel Psub units is formed below the first electrode 152. Below the organic electroluminescent layer 160, second electrodes 162 are formed in the subpixel Psub units. COPYRIGHT: (C)2004,JPO&NCIPI
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