Semiconductor wafer with a thin epitaxial silicon layer, and production process

摘要

A semiconductor wafer is made of a silicon substrate wafer and an epitaxial silicon layer deposited thereon. The substrate wafer has a specific resistance of 0.1 to 50 Omegacm, an oxygen concentration of less than 7.5*10<17 >atcm<-3 >and a nitrogen concentration of 1*10<13 >to 5*10<15 atcm><-3>. The epitaxial layer is 0.2 to 1.0 mum thick and has a surface on which fewer than 30 LLS (localized light scattering) defects which are greater in size than 0.085 mum can be detected. A method for producing the semiconductor wafer has a sequence of steps for providing the substrate wafer with the aforementioned features; heating the substrate wafer in a deposition reactor to a deposition temperature of at least 1120� C.; and depositing the epitaxial layer thereon with a thickness of 0.2 to 1.0 mum, immediately after the deposition temperature has been reached.