SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

A semiconductor device comprising a semiconductor layer (3), a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10), and a first insulation film (13) formed on the side walls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11), the first insulation film (13) covering part of the surface of the gate insulation film (10). This semiconductor device can control a leak current at an element isolation end to improve reliability.