发明名称 CHEMICAL/MECHANICAL POLISHING PAD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing pad capable of polishing without conditioning by using a diamond conditioner, or without intentionally deteriorating the planarity of a polishing face. <P>SOLUTION: This polishing pad is made mainly of graphite. Thus, it is possible to polish a CMP target layer without conditioning by using a diamond conditioner, or without intentionally deteriorating the planarity of the face to be polished. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214416(A) 申请公布日期 2004.07.29
申请号 JP20020382391 申请日期 2002.12.27
申请人 TOSHIBA CORP 发明人 YANO HIROYUKI
分类号 B24B53/007;B24B37/00;B24B37/20;B24B37/24;H01L21/304;H01L21/3205;H01L21/321;H01L21/768 主分类号 B24B53/007
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