SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a metal interconnect line which is markedly improved in electromigration resistance or stress migration resistance.

SOLUTION: A copper interconnect line 107 is composed of a silicon low-concentration region 104 and a silicon solid solution 106 provided on the silicon low-concentration region 104. The silicon solid solution layer 106 has a structure in which silicon is arranged as an interstitial element or a substitutional element in a copper crystal structure forming the copper interconnect line 107. Silicon-containing copper forming the silicon solid solution 106 is kept in a state in which silicon is introduced as an interstitial element or a substitutional element while the silicon-containing copper maintains a copper crystal structure (face-centered cubic lattice;lattice constant 3.6Å).

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