发明名称 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION
摘要 A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
申请公布号 WO2004024981(A3) 申请公布日期 2004.07.29
申请号 WO2003US28436 申请日期 2003.09.10
申请人 PLANAR SYSTEMS, INC.;AITCHISON, BRADLEY, J.;MAULA, JARMO;LESKINEN, HANNU;LANG, TEEMU;KUOSMANEN, PEKKA;HAERKOENEN, KARI;SONNINEN, MARTTI 发明人 AITCHISON, BRADLEY, J.;MAULA, JARMO;LESKINEN, HANNU;LANG, TEEMU;KUOSMANEN, PEKKA;HAERKOENEN, KARI;SONNINEN, MARTTI
分类号 C23C16/44;C30B25/14 主分类号 C23C16/44
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