| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an HSG film by which the generation of film peeling or leak current can be prevented from happening. <P>SOLUTION: A doped polysilicon film 2 is stacked on the surface of a wafer 1, and the polysilicon film 2 stacked on the rear surface of the wafer 1 is removed and the surface thereof is washed. At this time, a natural oxide film 3 and a scattering organic substance 4 are stacked on the doped polysilicon film 2. Next, an excimer UV light is applied to both surfaces of the wafer 1. Then, the natural oxide film 3 is removed by IPA washing and an HSG 5 is stacked by CVD method. As a result, defective formation of the HSG 5 due to the organic substance 4 can be reduced and lowering of yield be also prevented. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
